Nuclear spin-lattice relaxation by optically bistable defects in CdF2:In
Identifieur interne : 00E321 ( Main/Repository ); précédent : 00E320; suivant : 00E322Nuclear spin-lattice relaxation by optically bistable defects in CdF2:In
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Abstract
Nuclear spin-lattice relaxation rates have been measured for 113Cd and 19F in CdF2 containing optically bistable In impurities. In the present work, relaxation rates were measured from 25 K to 500 K for 113Cd and from 200 K to 400 K for 19F. The rates for both species are strongly enhanced in semiconducting CdF2:In compared with undoped materials. Except below 100 K, nuclear relaxation is attributed to relaxation by thermally excited conduction electrons for 113Cd and thermally excited hydrogenic shallow donor states for 19F. From the temperature dependences of the relaxation rates, activation energies of 185±10 meV and 70±10 meV are inferred for the concentrations of conduction electrons and hydrogenic states, respectively. These results are consistent with the DX model of the bistable impurities and with binding energies determined previously. Following in situ white light illumination below 100 K, persistent photoenhancement of the 113Cd relaxation rates was observed and attributed to metastable photogenerated shallow donor states.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nuclear spin-lattice relaxation by optically bistable defects in CdF<sub>2</sub>:In</title><author><name sortKey="Shroyer, M" uniqKey="Shroyer M">M. Shroyer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Oregon State University, Corvallis, Oregon 97331-6507</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, Oregon State University, Corvallis</wicri:cityArea></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>S. I. Vavilov State Optical Institute, 199034 St. Petersburg, Russia</s1></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>S. I. Vavilov State Optical Institute, 199034 St. Petersburg</wicri:regionArea><wicri:noRegion>199034 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Warren, W W" uniqKey="Warren W">W. W. Warren</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Oregon State University, Corvallis, Oregon 97331-6507</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, Oregon State University, Corvallis</wicri:cityArea></affiliation></author><author><name sortKey="Ryskin, A I" uniqKey="Ryskin A">A. I. Ryskin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Oregon State University, Corvallis, Oregon 97331-6507</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, Oregon State University, Corvallis</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0254798</idno><date when="2002-04-15">2002-04-15</date><idno type="stanalyst">PASCAL 02-0254798 AIP</idno><idno type="RBID">Pascal:02-0254798</idno><idno type="wicri:Area/Main/Corpus">00F461</idno><idno type="wicri:Area/Main/Repository">00E321</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium compounds</term><term>Defect states</term><term>Experimental study</term><term>Impurity states</term><term>Indium</term><term>Nuclear spin-lattice relaxation</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7155</term><term>7660</term><term>7155H</term><term>Etude expérimentale</term><term>Cadmium composé</term><term>Indium</term><term>Relaxation spin nucléaire réseau</term><term>Etat défaut</term><term>Etat impureté</term><term>Semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Nuclear spin-lattice relaxation rates have been measured for <sup>113</sup>Cd and <sup>19</sup>F in CdF<sub>2</sub> containing optically bistable In impurities. In the present work, relaxation rates were measured from 25 K to 500 K for <sup>113</sup>Cd and from 200 K to 400 K for <sup>19</sup>F. The rates for both species are strongly enhanced in semiconducting CdF<sub>2</sub>:In compared with undoped materials. Except below 100 K, nuclear relaxation is attributed to relaxation by thermally excited conduction electrons for <sup>113</sup>Cd and thermally excited hydrogenic shallow donor states for 19F. From the temperature dependences of the relaxation rates, activation energies of 185±10 meV and 70±10 meV are inferred for the concentrations of conduction electrons and hydrogenic states, respectively. These results are consistent with the DX model of the bistable impurities and with binding energies determined previously. Following in situ white light illumination below 100 K, persistent photoenhancement of the <sup>113</sup>Cd relaxation rates was observed and attributed to metastable photogenerated shallow donor states.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>65</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Nuclear spin-lattice relaxation by optically bistable defects in CdF<sub>2</sub>:In</s1></fA08><fA11 i1="01" i2="1"><s1>SHROYER (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>WARREN (W. W.)</s1></fA11><fA11 i1="03" i2="1"><s1>RYSKIN (A. I.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Oregon State University, Corvallis, Oregon 97331-6507</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>S. I. Vavilov State Optical Institute, 199034 St. Petersburg, Russia</s1></fA14><fA20><s2>165202-165202-6</s2></fA20><fA21><s1>2002-04-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0254798</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Nuclear spin-lattice relaxation rates have been measured for <sup>113</sup>Cd and <sup>19</sup>F in CdF<sub>2</sub> containing optically bistable In impurities. In the present work, relaxation rates were measured from 25 K to 500 K for <sup>113</sup>Cd and from 200 K to 400 K for <sup>19</sup>F. The rates for both species are strongly enhanced in semiconducting CdF<sub>2</sub>:In compared with undoped materials. Except below 100 K, nuclear relaxation is attributed to relaxation by thermally excited conduction electrons for <sup>113</sup>Cd and thermally excited hydrogenic shallow donor states for 19F. From the temperature dependences of the relaxation rates, activation energies of 185±10 meV and 70±10 meV are inferred for the concentrations of conduction electrons and hydrogenic states, respectively. These results are consistent with the DX model of the bistable impurities and with binding energies determined previously. Following in situ white light illumination below 100 K, persistent photoenhancement of the <sup>113</sup>Cd relaxation rates was observed and attributed to metastable photogenerated shallow donor states.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70A55</s0></fC02><fC02 i1="02" i2="3"><s0>001B70F60</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A55H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7155</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7660</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7155H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Cadmium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Cadmium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Relaxation spin nucléaire réseau</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nuclear spin-lattice relaxation</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etat défaut</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Defect states</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Etat impureté</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Impurity states</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor materials</s0></fC03><fN21><s1>147</s1></fN21><fN47 i1="01" i2="1"><s0>0219M000789</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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